NVMFD5C650NLT1G Whakatakotoranga Hangarau

MOSFET 2N-CH 60V 111A S08FL

Huanga Hua Uara Huanga
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Manufacturer AMI Semiconductor / ON Semiconductor
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 2.2V @ 98µA
Series Automotive, AEC-Q101
Power - Max 3.5W (Ta), 125W (Tc)
Package / Case 8-PowerTDFN
Operating Temperature -55°C ~ 175°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V
FET Feature Standard
Detailed Description Mosfet Array 2 N-Channel (Dual) 60V 21A (Ta), 111A (Tc) 3.5W (Ta), 125W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Supplier Device Package 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Rds On (Max) @ Id, Vgs 4.2 mOhm @ 20A, 10V
Packaging Tape & Reel (TR)
Other Names NVMFD5C650NLT1G-ND NVMFD5C650NLT1GOSTR
Mounting Type Surface Mount
Manufacturer Standard Lead Time 50 Weeks
Input Capacitance (Ciss) (Max) @ Vds 2546pF @ 25V
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 21A (Ta), 111A (Tc)
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