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SIRA12BDP-T1-GE3 Whakatakotoranga Hangarau

MOSFET N-CHAN 30V

Huanga Hua Uara Huanga
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer Electro-Films (EFI) / Vishay
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 2.4V @ 250µA
Technology MOSFET (Metal Oxide)
Series TrenchFET® Gen IV
Power Dissipation (Max) 5W (Ta), 38W (Tc)
Package / Case PowerPAK® SO-8
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 27A (Ta), 60A (Tc)
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) +20V, -16V
Supplier Device Package PowerPAK® SO-8
Rds On (Max) @ Id, Vgs 4.3 mOhm @ 10A, 10V
Packaging Cut Tape (CT)
Other Names SIRA12BDP-T1-GE3CT
Mounting Type Surface Mount
Manufacturer Standard Lead Time 42 Weeks
Input Capacitance (Ciss) (Max) @ Vds 1470pF @ 15V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Detailed Description N-Channel 30V 27A (Ta), 60A (Tc) 5W (Ta), 38W (Tc) Surface Mount PowerPAK® SO-8
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SIRA12BDP-T1-GE3 Tuhinga

Tikiakehia nga papaarangi me nga tuhinga kaihanga mo SIRA12BDP-T1-GE3

Ko etahi atu ko   "SIRA1"   nga wahanga

Ko nga waahanga e whai ake nei ko  'SIRA1' 

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SIRA12DP-T1-GE3 Vishay Siliconix Single MOSFETs Transistors

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SIRA12BDP-T1-GE3 nga kaihanga waitohu: Electro-Films (EFI) / Vishay, Bonchip taonga, SIRA12BDP-T1-GE3 utu tohutoro. SIRA12BDP-T1-GE3 tawhā, SIRA12BDP-T1-GE3 Pepa Raraunga PDF me te whakaahuatanga whakaahua pine.Ka taea e koe te whakamahi i te SIRA12BDP-T1-GE3 Hononga Mono, DSP Dateseet PDF, kimihia SIRA12BDP-T1-GE3 te hoahoa titi me te hoahoa ara iahiko me te tikanga whakamahi mahi, SIRA12BDP-T1-GE3 akoranga hikohiko.Ka taea e koe te tango mai i te Bonchip.
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