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AUIRFSL4310 Whakatakotoranga Hangarau

Trans MOSFET N-CH 100V 130A 3-Pin(3+Tab) TO-262 Tube

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mount Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Obsolete
Number of Terminations 3
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) 40
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 26 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 75A Tc
Rise Time 110ns
Turn-Off Delay Time 68 ns
Threshold Voltage 2V
Drain Current-Max (Abs) (ID) 75A
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 980 mJ
Length 10.67mm
Radiation Hardening No
RoHS Status RoHS Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2010
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) 260
Number of Elements 1
Element Configuration Single
Power Dissipation 300W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7m Ω @ 75A, 10V
Input Capacitance (Ciss) (Max) @ Vds 7670pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 250nC @ 10V
Fall Time (Typ) 78 ns
Continuous Drain Current (ID) 130A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.007Ohm
Pulsed Drain Current-Max (IDM) 550A
Height 9.65mm
Width 4.83mm
REACH SVHC No SVHC
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