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BCP5310E6327HTSA1 Whakatakotoranga Hangarau

BCP5310E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Bonchip

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-261-4, TO-261AA
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Part Status Obsolete
Number of Terminations 4
Subcategory Other Transistors
Terminal Position DUAL
Frequency 125MHz
Number of Elements 1
Power Dissipation 2W
Transistor Application AMPLIFIER
Transistor Type PNP
Max Collector Current 1A
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 80V
Transition Frequency 125MHz
Emitter Base Voltage (VEBO) 5V
RoHS Status RoHS Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 4
Operating Temperature 150°C TJ
Published 2011
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 2W
Terminal Form GULL WING
Base Part Number BCP53
Configuration SINGLE
Case Connection COLLECTOR
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 500mV
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA 2V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Current - Collector (Ic) (Max) 1A
Collector Base Voltage (VCBO) 100V
Radiation Hardening No
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