BFN26E6433HTMA1 Whakatakotoranga Hangarau

BFN26E6433HTMA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Bonchip

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Part Status Obsolete
Number of Terminations 3
Max Power Dissipation 360mW
Terminal Form GULL WING
Base Part Number BFN26
Configuration SINGLE
Transistor Application SWITCHING
Transistor Type NPN
Max Collector Current 200mA
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 300V
Transition Frequency 70MHz
Emitter Base Voltage (VEBO) 6V
RoHS Status RoHS Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature 150°C TJ
Published 2007
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Position DUAL
Frequency 70MHz
Number of Elements 1
Power Dissipation 360mW
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 300V
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 30mA 10V
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Current - Collector (Ic) (Max) 200mA
Collector Base Voltage (VCBO) 300V
Radiation Hardening No
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Ko etahi atu ko   "BFN26"   nga wahanga

Ko nga waahanga e whai ake nei ko  'BFN26' 

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