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BSB104N08NP3GXUSA1 Whakatakotoranga Hangarau

MOSFET N-CH 80V 13A 2WDSON

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 26 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -40°C~150°C TJ
Published 2008
JESD-609 Code e4
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form NO LEAD
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 10.4m Ω @ 10A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 13A Ta 50A Tc
Rise Time 4ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Continuous Drain Current (ID) 50A
Drain-source On Resistance-Max 0.0104Ohm
DS Breakdown Voltage-Min 80V
RoHS Status ROHS3 Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 3-WDSON
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Part Status Active
Number of Terminations 3
Terminal Finish Silver/Nickel (Ag/Ni)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 2.8W Ta 42W Tc
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 40μA
Input Capacitance (Ciss) (Max) @ Vds 2100pF @ 40V
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Drain to Source Voltage (Vdss) 80V
Vgs (Max) ±20V
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 200A
Avalanche Energy Rating (Eas) 110 mJ
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