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BSC084P03NS3EGATMA1 Whakatakotoranga Hangarau

MOSFET P-CH 30V 14.9A TDSON-8

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2004
JESD-609 Code e3
Part Status Active
Number of Terminations 5
Terminal Finish Tin (Sn)
Terminal Position DUAL
Pin Count 8
Number of Elements 1
Power Dissipation-Max 2.5W Ta 69W Tc
Power Dissipation 2.5W
Turn On Delay Time 16.4 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 110μA
Input Capacitance (Ciss) (Max) @ Vds 4240pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 57.7nC @ 10V
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±25V
Turn-Off Delay Time 33.3 ns
Gate to Source Voltage (Vgs) 25V
Pulsed Drain Current-Max (IDM) 200A
RoHS Status ROHS3 Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-PowerTDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
JESD-30 Code R-PDSO-F5
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Rds On (Max) @ Id, Vgs 8.4m Ω @ 50A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 14.9A Ta 78.6A Tc
Rise Time 133.5ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Fall Time (Typ) 8.1 ns
Continuous Drain Current (ID) 14.9A
Max Dual Supply Voltage -30V
Radiation Hardening No
Lead Free Contains Lead
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