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BSC097N06NSATMA1 Whakatakotoranga Hangarau

BSC097N06NSATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 26 Weeks
Mount Surface Mount
Package / Case 8-PowerTDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Part Status Active
Number of Terminations 5
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Reach Compliance Code not_compliant
JESD-30 Code R-PDSO-F5
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9.7m Ω @ 40A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 46A Tc
Rise Time 2ns
Vgs (Max) ±20V
Threshold Voltage 2.8V
Max Dual Supply Voltage 60V
Drain-source On Resistance-Max 0.0097Ohm
REACH SVHC No SVHC
Lead Free Contains Lead
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2005
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 2.5W Ta 36W Tc
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.3V @ 14μA
Input Capacitance (Ciss) (Max) @ Vds 1075pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Continuous Drain Current (ID) 46A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 12A
Avalanche Energy Rating (Eas) 13 mJ
RoHS Status ROHS3 Compliant
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