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BSL211SPH6327XTSA1 Whakatakotoranga Hangarau

MOSFET P-CH 20V 4.7A 6TSOP

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Published 2001
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating -4.7A
Number of Elements 1
Element Configuration Single
Power Dissipation 2W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 67m Ω @ 4.7A, 4.5V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 4.7A Ta
Rise Time 13.9ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Fall Time (Typ) 23.3 ns
Continuous Drain Current (ID) 4.7A
Max Dual Supply Voltage -20V
Height 1mm
Width 1.6mm
Lead Free Lead Free
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Part Status Active
Number of Terminations 6
Terminal Finish Tin (Sn)
Voltage - Rated DC -20V
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 2W Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 8.7 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.2V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 654pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 12.4nC @ 10V
Drain to Source Voltage (Vdss) 20V
Vgs (Max) ±12V
Turn-Off Delay Time 25 ns
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
Length 2.9mm
RoHS Status ROHS3 Compliant
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