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BSO612CV Whakatakotoranga Hangarau

MOSFET N/P-CH 60V 3A/2A 8SOIC

Huanga Hua Uara Huanga
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series SIPMOS®
Part Status Obsolete
Number of Terminations 8
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Terminal Position DUAL
Peak Reflow Temperature (Cel) 235
Base Part Number BSO612
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type N and P-Channel
Vgs(th) (Max) @ Id 4V @ 20μA
Current - Continuous Drain (Id) @ 25°C 3A 2A
Rise Time 60ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Turn-Off Delay Time 145 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.12Ohm
Avalanche Energy Rating (Eas) 47 mJ
FET Feature Standard
RoHS Status Non-RoHS Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 1999
JESD-609 Code e0
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Max Power Dissipation 2W
Terminal Form GULL WING
Current Rating 3A
Pin Count 8
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Power Dissipation 2W
Rds On (Max) @ Id, Vgs 120m Ω @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds 340pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 15.5nC @ 10V
Drain to Source Voltage (Vdss) 60V
Fall Time (Typ) 95 ns
Continuous Drain Current (ID) 2A
Drain Current-Max (Abs) (ID) 3A
Drain to Source Breakdown Voltage -60V
FET Technology METAL-OXIDE SEMICONDUCTOR
Radiation Hardening No
Lead Free Contains Lead
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