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IPA60R190E6XKSA1 Whakatakotoranga Hangarau

MOSFET N-CH 600V 20.2A TO220

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Package / Case TO-220-3 Full Pack
Transistor Element Material SILICON
Packaging Tube
Series CoolMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 190m Ω @ 9.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
JEDEC-95 Code TO-220AB
Pulsed Drain Current-Max (IDM) 59A
Avalanche Energy Rating (Eas) 418 mJ
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Operating Temperature -55°C~150°C TJ
Published 2008
JESD-609 Code e3
Part Status Not For New Designs
Number of Terminations 3
Terminal Finish Tin (Sn)
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Power Dissipation-Max 34W Tc
Case Connection ISOLATED
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 630μA
Current - Continuous Drain (Id) @ 25°C 20.2A Tc
Drain to Source Voltage (Vdss) 600V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.19Ohm
DS Breakdown Voltage-Min 600V
RoHS Status ROHS3 Compliant
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