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IPB180N03S4LH0ATMA1 Whakatakotoranga Hangarau

MOSFET N-CH 30V 180A TO263-7-3

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Number of Pins 7
Operating Temperature -55°C~175°C TJ
Published 2009
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature ULTRA-LOW RESISTANCE
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G6
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 9 ns
Rds On (Max) @ Id, Vgs 0.95m Ω @ 100A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 180A Tc
Rise Time 7ns
Vgs (Max) ±16V
Turn-Off Delay Time 60 ns
Gate to Source Voltage (Vgs) 16V
Drain-source On Resistance-Max 0.00095Ohm
RoHS Status ROHS3 Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Part Status Active
Number of Terminations 6
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
Reference Standard AEC-Q101
Number of Elements 1
Power Dissipation-Max 250W Tc
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 2.2V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds 23000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 25 ns
Continuous Drain Current (ID) 180A
Max Dual Supply Voltage 30V
Avalanche Energy Rating (Eas) 980 mJ
Lead Free Contains Lead
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