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IPB65R310CFDATMA1 Whakatakotoranga Hangarau

MOSFET CoolMOS 650V 310mOhm CFD2 N-Chan MOSFET

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2008
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 4
Number of Elements 1
Power Dissipation-Max 104.2W Tc
Turn On Delay Time 11 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4.5V @ 400μA
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 7 ns
Continuous Drain Current (ID) 11.4A
Max Dual Supply Voltage 650V
RoHS Status ROHS3 Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series CoolMOS™
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 310m Ω @ 4.4A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 11.4A Tc
Rise Time 7.5ns
Vgs (Max) ±20V
Turn-Off Delay Time 45 ns
Gate to Source Voltage (Vgs) 20V
Avalanche Energy Rating (Eas) 290 mJ
Lead Free Contains Lead
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