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IPD60N10S412ATMA1 Whakatakotoranga Hangarau

MOSFET N-CH TO252-3

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2013
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 94W Tc
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 3.5V @ 46μA
Input Capacitance (Ciss) (Max) @ Vds 2470pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 13 ns
Continuous Drain Current (ID) 60A
Max Dual Supply Voltage 100V
Pulsed Drain Current-Max (IDM) 240A
RoHS Status ROHS3 Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, OptiMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 6 ns
Rds On (Max) @ Id, Vgs 12.2m Ω @ 60A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 60A Tc
Rise Time 3ns
Vgs (Max) ±20V
Turn-Off Delay Time 9 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0122Ohm
Avalanche Energy Rating (Eas) 120 mJ
Lead Free Contains Lead
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