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IPD65R250C6XTMA1 Whakatakotoranga Hangarau

Trans MOSFET N-CH 700V 16.1A 3-Pin(2+Tab) TO-252

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Transistor Element Material SILICON
Packaging Cut Tape (CT)
Series CoolMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 3
Number of Elements 1
Power Dissipation-Max 208.3W Tc
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 250m Ω @ 4.4A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 16.1A Tc
Rise Time 11ns
Vgs (Max) ±20V
Turn-Off Delay Time 100 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.25Ohm
Pulsed Drain Current-Max (IDM) 46A
RoHS Status RoHS Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -55°C~150°C TJ
Published 2008
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 13 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 400μA
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 12 ns
Continuous Drain Current (ID) 16.1A
Max Dual Supply Voltage 650V
Drain to Source Breakdown Voltage 700V
Avalanche Energy Rating (Eas) 290 mJ
Lead Free Lead Free
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