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IPL60R299CPAUMA1 Whakatakotoranga Hangarau

Trans MOSFET N-CH 600V 11.1A 4-Pin VSON EP

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case 4-PowerTSFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series CoolMOS™
Pbfree Code no
Moisture Sensitivity Level (MSL) 2A (4 Weeks)
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 10 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 440μA
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Drain to Source Voltage (Vdss) 650V
Vgs (Max) ±20V
Continuous Drain Current (ID) 11.1A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.299Ohm
REACH SVHC No SVHC
Lead Free Contains Lead
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 4
Operating Temperature -40°C~150°C TJ
Published 2010
JESD-609 Code e3
Part Status Not For New Designs
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Form NO LEAD
Reach Compliance Code not_compliant
Pin Count 4
Number of Elements 1
Power Dissipation-Max 96W Tc
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 299m Ω @ 6.6A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 11.1A Tc
Rise Time 5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 40 ns
Threshold Voltage 3V
Max Dual Supply Voltage 600V
Avalanche Energy Rating (Eas) 290 mJ
RoHS Status ROHS3 Compliant
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