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IPN60R600P7SATMA1 Whakatakotoranga Hangarau

MOSFET N-CHANNEL 600V 6A SOT223

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Package / Case TO-261-3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series CoolMOS™ P7
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 7W Tc
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 80μA
Current - Continuous Drain (Id) @ 25°C 6A Tc
Drain to Source Voltage (Vdss) 600V
Vgs (Max) ±20V
DS Breakdown Voltage-Min 600V
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -40°C~150°C TJ
Published 2014
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PDSO-G3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 600m Ω @ 1.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds 363pF @ 400V
Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain-source On Resistance-Max 0.6Ohm
RoHS Status ROHS3 Compliant
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