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IPP60R040C7XKSA1 Whakatakotoranga Hangarau

MOSFET N-CH 600V 50A TO220-3

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mounting Type Through Hole
Transistor Element Material SILICON
Packaging Tube
Series CoolMOS™ C7
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 227W Tc
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 1.24mA
Input Capacitance (Ciss) (Max) @ Vds 4340pF @ 400V
Gate Charge (Qg) (Max) @ Vgs 107nC @ 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.04Ohm
Avalanche Energy Rating (Eas) 249 mJ
Lead Free Lead Free
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Operating Temperature -55°C~150°C TJ
Published 2015
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 40m Ω @ 24.9A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 50A Tc
Drive Voltage (Max Rds On,Min Rds On) 10V
Continuous Drain Current (ID) 50A
Max Dual Supply Voltage 600V
Pulsed Drain Current-Max (IDM) 211A
RoHS Status ROHS3 Compliant
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