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IPSA70R2K0CEAKMA1 Whakatakotoranga Hangarau

MOSFET N-CHANNEL 700V 4A IPAK

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Transistor Element Material SILICON
Packaging Tube
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Reach Compliance Code not_compliant
JESD-30 Code R-PSIP-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2 Ω @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds 163pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 7.8nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain-source On Resistance-Max 2Ohm
DS Breakdown Voltage-Min 700V
RoHS Status ROHS3 Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Operating Temperature -40°C~150°C TJ
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 42W Tc
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 70μA
Current - Continuous Drain (Id) @ 25°C 4A Tc
Drain to Source Voltage (Vdss) 700V
Vgs (Max) ±20V
Pulsed Drain Current-Max (IDM) 6.3A
Avalanche Energy Rating (Eas) 11 mJ
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