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IRF1018ESPBF Whakatakotoranga Hangarau

IRF1018ESPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 52 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2008
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 110W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.4m Ω @ 47A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2290pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 69nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 46 ns
Continuous Drain Current (ID) 79A
Gate to Source Voltage (Vgs) 20V
Avalanche Energy Rating (Eas) 88 mJ
Height 4.826mm
Width 9.65mm
REACH SVHC No SVHC
Lead Free Lead Free
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Discontinued
Number of Terminations 2
Resistance 8.4MOhm
Subcategory FET General Purpose Power
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 110W
Turn On Delay Time 13 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 100μA
Current - Continuous Drain (Id) @ 25°C 79A Tc
Rise Time 35ns
Vgs (Max) ±20V
Turn-Off Delay Time 55 ns
Threshold Voltage 4V
Drain to Source Breakdown Voltage 60V
Recovery Time 39 ns
Length 10.668mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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IRF1018ESPBF Tuhinga

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