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IRF2907ZS-7PPBF Whakatakotoranga Hangarau

MOSFET N-CH 75V 160A D2PAK7

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Obsolete
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 300W
Turn On Delay Time 21 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 160A Tc
Rise Time 90ns
Vgs (Max) ±20V
Turn-Off Delay Time 92 ns
Continuous Drain Current (ID) 160A
Gate to Source Voltage (Vgs) 20V
Dual Supply Voltage 75V
Nominal Vgs 4 V
Length 10.3378mm
Radiation Hardening No
RoHS Status RoHS Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 7
Operating Temperature -55°C~175°C TJ
Published 2005
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 4.5MOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Voltage - Rated DC 75V
Terminal Form GULL WING
Current Rating 160A
JESD-30 Code R-PSSO-G6
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.8m Ω @ 110A, 10V
Input Capacitance (Ciss) (Max) @ Vds 7580pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 44 ns
Reverse Recovery Time 35 ns
Threshold Voltage 4V
Drain to Source Breakdown Voltage 75V
Recovery Time 53 ns
Height 4.5466mm
Width 10.05mm
REACH SVHC No SVHC
Lead Free Lead Free
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