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IRF5305PBF Whakatakotoranga Hangarau

IRF5305PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mount Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 60mOhm
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Lead Pitch 2.54mm
Number of Channels 1
Element Configuration Single
Turn On Delay Time 14 ns
Rds On (Max) @ Id, Vgs 60mOhm @ 16A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Drain to Source Voltage (Vdss) 55V
Vgs (Max) ±20V
Turn-Off Delay Time 39 ns
Threshold Voltage -4V
Drain to Source Breakdown Voltage -55V
Input Capacitance 1.2nF
Max Junction Temperature (Tj) 175°C
Rds On Max 60 mΩ
Height 19.3mm
Width 4.69mm
REACH SVHC No SVHC
Lead Free Contains Lead, Lead Free
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2000
Part Status Active
Termination Through Hole
Max Operating Temperature 175°C
Voltage - Rated DC -55V
Current Rating -31A
Number of Elements 1
Power Dissipation-Max 110W Tc
Power Dissipation 110W
FET Type P-Channel
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 31A Tc
Rise Time 66ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 63 ns
Continuous Drain Current (ID) -31A
Gate to Source Voltage (Vgs) 20V
Dual Supply Voltage -55V
Recovery Time 110 ns
Drain to Source Resistance 60mOhm
Nominal Vgs -4 V
Length 10.5156mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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IRF5305PBF Tuhinga

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  • Rauraraunga

Ko etahi atu ko   "IRF53"   nga wahanga

Ko nga waahanga e whai ake nei ko  'IRF53' 

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