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IRF6637TRPBF Whakatakotoranga Hangarau

MOSFET N-CH 30V 14A DIRECTFET

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 5
Operating Temperature -40°C~150°C TJ
Published 2006
JESD-609 Code e1
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 14A
Number of Elements 1
Power Dissipation-Max 2.3W Ta 42W Tc
Power Dissipation 89W
Turn On Delay Time 12 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.35V @ 250μA
Current - Continuous Drain (Id) @ 25°C 14A Ta 59A Tc
Rise Time 15ns
Vgs (Max) ±20V
Turn-Off Delay Time 14 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Length 6.35mm
Radiation Hardening No
Lead Free Lead Free
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case DirectFET™ Isometric MP
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Voltage - Rated DC 30V
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.7m Ω @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1330pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 3.8 ns
Continuous Drain Current (ID) 14mA
Drain-source On Resistance-Max 0.0077Ohm
Height 506μm
Width 5.05mm
RoHS Status ROHS3 Compliant
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