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IRF6727MTRPBF Whakatakotoranga Hangarau

IRF6727MTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 5
Operating Temperature -40°C~150°C TJ
Published 2009
JESD-609 Code e1
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position BOTTOM
Number of Elements 1
Power Dissipation-Max 2.8W Ta 89W Tc
Power Dissipation 89W
Turn On Delay Time 21 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.35V @ 100μA
Current - Continuous Drain (Id) @ 25°C 32A Ta 180A Tc
Rise Time 31ns
Vgs (Max) ±20V
Turn-Off Delay Time 24 ns
Threshold Voltage 1.8V
Drain to Source Breakdown Voltage 30V
Height 508μm
Width 5.0546mm
REACH SVHC No SVHC
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case DirectFET™ Isometric MX
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Technology MOSFET (Metal Oxide)
JESD-30 Code R-XBCC-N3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.7m Ω @ 32A, 10V
Input Capacitance (Ciss) (Max) @ Vds 6190pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 74nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 16 ns
Continuous Drain Current (ID) 32A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 260A
Length 6.35mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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