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IRF7805PBF Whakatakotoranga Hangarau

MOSFET N-CH 30V 13A 8-SOIC

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Discontinued
Number of Terminations 8
Resistance 11MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating 13A
Number of Elements 1
Element Configuration Single
Power Dissipation 2.5W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 11m Ω @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C 13A Ta
Rise Time 20ns
Vgs (Max) ±12V
Turn-Off Delay Time 38 ns
Threshold Voltage 3V
Drain to Source Breakdown Voltage 30V
Height 1.4986mm
Width 3.9878mm
REACH SVHC No SVHC
Lead Free Contains Lead, Lead Free
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2005
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 30V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 16 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 31nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V
Fall Time (Typ) 16 ns
Continuous Drain Current (ID) 13A
Gate to Source Voltage (Vgs) 12V
Nominal Vgs 3 V
Length 4.9784mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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