IRF8304MTRPBF Whakatakotoranga Hangarau

MOSFET N-CH 30V 28A MX

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 7
Operating Temperature -40°C~150°C TJ
Published 2013
Part Status Active
Max Operating Temperature 150°C
Technology MOSFET (Metal Oxide)
Power Dissipation 100W
FET Type N-Channel
Vgs(th) (Max) @ Id 2.35V @ 100μA
Current - Continuous Drain (Id) @ 25°C 28A Ta 170A Tc
Rise Time 22ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 13 ns
Continuous Drain Current (ID) 28A
Drain to Source Breakdown Voltage 30V
Drain to Source Resistance 3.2mOhm
Nominal Vgs 1.8 V
REACH SVHC No SVHC
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case DirectFET™ Isometric MX
Supplier Device Package DIRECTFET™ MX
Packaging Tape & Reel (TR)
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Min Operating Temperature -40°C
Power Dissipation-Max 2.8W Ta 100W Tc
Turn On Delay Time 16 ns
Rds On (Max) @ Id, Vgs 2.2mOhm @ 28A, 10V
Input Capacitance (Ciss) (Max) @ Vds 4700pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 42nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
Turn-Off Delay Time 19 ns
Gate to Source Voltage (Vgs) 20V
Input Capacitance 4.7nF
Rds On Max 2.2 mΩ
Radiation Hardening No
RoHS Status ROHS3 Compliant
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