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IRFB7434PBF Whakatakotoranga Hangarau

IRFB7434PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2012
Part Status Active
Number of Terminations 3
Resistance 1.6MOhm
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 294W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.6m Ω @ 100A, 10V
Input Capacitance (Ciss) (Max) @ Vds 10820pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 324nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Turn-Off Delay Time 115 ns
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Avalanche Energy Rating (Eas) 490 mJ
Nominal Vgs 3 V
Length 10.67mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®, StrongIRFET™
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Number of Elements 1
Element Configuration Single
Power Dissipation 294W
Turn On Delay Time 24 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.9V @ 250μA
Current - Continuous Drain (Id) @ 25°C 195A Tc
Rise Time 68ns
Vgs (Max) ±20V
Continuous Drain Current (ID) 195A
JEDEC-95 Code TO-220AB
Drain to Source Breakdown Voltage 40V
Recovery Time 38 ns
Height 16.51mm
Width 4.83mm
REACH SVHC No SVHC
Lead Free Lead Free
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