IRFI4020H-117P Whakatakotoranga Hangarau

200V Dual N-Channel Digital Audio HEXFET Power MOSFET in a TO-220 Full-Pak(Iso) package.

Huanga Hua Uara Huanga
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Number of Pins 5
Operating Temperature -55°C~150°C TJ
Published 2006
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position SINGLE
Element Configuration Dual
Power Dissipation 21W
Turn On Delay Time 8.4 ns
Transistor Application AMPLIFIER
Vgs(th) (Max) @ Id 4.9V @ 100μA
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Drain to Source Voltage (Vdss) 200V
Turn-Off Delay Time 18 ns
Threshold Voltage 4.9V
Drain to Source Breakdown Voltage 200V
Avalanche Energy Rating (Eas) 130 mJ
Recovery Time 110 ns
Nominal Vgs 4.9 V
Length 10.6172mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-5 Full Pack
Transistor Element Material SILICON
Packaging Tube
Part Status Active
Number of Terminations 5
Resistance 100MOhm
Max Power Dissipation 21W
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 100m Ω @ 5.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1240pF @ 25V
Rise Time 8ns
Fall Time (Typ) 4 ns
Continuous Drain Current (ID) 9.1A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 36A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Height 9.02mm
Width 4.826mm
REACH SVHC No SVHC
Lead Free Lead Free
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