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IRFS4010-7PPBF Whakatakotoranga Hangarau

MOSFET N-CH 100V 190A D2PAK-7

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Discontinued
Number of Terminations 6
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 380W
Turn On Delay Time 19 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 190A Tc
Rise Time 56ns
Vgs (Max) ±20V
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 190A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 330 mJ
Height 4.55mm
Width 9.65mm
REACH SVHC No SVHC
Lead Free Lead Free
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 7
Operating Temperature -55°C~175°C TJ
Published 2005
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
JESD-30 Code R-PSSO-G6
Power Dissipation-Max 380W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4m Ω @ 110A, 10V
Input Capacitance (Ciss) (Max) @ Vds 9830pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 230nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 48 ns
Reverse Recovery Time 60 ns
Threshold Voltage 4V
Drain-source On Resistance-Max 0.004Ohm
Dual Supply Voltage 100V
Nominal Vgs 4 V
Length 10.67mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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