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IRFU120NPBF Whakatakotoranga Hangarau
IRFU120NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip
Huanga Hua | Uara Huanga |
---|---|
Category | Discrete Semiconductors / Single MOSFETs Transistors |
Manufacturer | Infineon Technologies |
Factory Lead Time | 3 Weeks |
Factory Lead Time | 12 Weeks |
Mounting Type | Through Hole |
Number of Pins | 3 |
Operating Temperature | -55°C~175°C TJ |
Published | 1998 |
JESD-609 Code | e3 |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Termination | Through Hole |
Resistance | 210mOhm |
Additional Feature | AVALANCHE RATED |
Voltage - Rated DC | 100V |
Peak Reflow Temperature (Cel) | 260 |
[email protected] Reflow Temperature-Max (s) | 30 |
Number of Elements | 1 |
Power Dissipation-Max | 48W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 210m Ω @ 5.6A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 330pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Turn-Off Delay Time | 32 ns |
Threshold Voltage | 4V |
Drain Current-Max (Abs) (ID) | 7.7A |
Dual Supply Voltage | 100V |
Max Junction Temperature (Tj) | 175°C |
Height | 9.75mm |
Width | 2.3mm |
RoHS Status | ROHS3 Compliant |
Huanga Hua | Uara Huanga |
---|---|
Part Status | Active |
RoHS Status | ROHS3 Compliant |
Pbfree Code | yes |
Mount | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Transistor Element Material | SILICON |
Packaging | Tube |
Series | HEXFET® |
Part Status | Active |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Current Rating | 9.4A |
Qualification Status | Not Qualified |
Number of Channels | 1 |
Element Configuration | Single |
Power Dissipation | 48W |
Turn On Delay Time | 4.5 ns |
Transistor Application | SWITCHING |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Current - Continuous Drain (Id) @ 25°C | 9.4A Tc |
Rise Time | 23ns |
Vgs (Max) | ±20V |
Continuous Drain Current (ID) | 9.4A |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 100V |
Recovery Time | 150 ns |
Nominal Vgs | 4 V |
Length | 6.6mm |
REACH SVHC | No SVHC |
Lead Free | Contains Lead, Lead Free |
IRFU120NPBF Tuhinga
Tikiakehia nga papaarangi me nga tuhinga kaihanga mo IRFU120NPBF
-
Rauraraunga
Ko etahi atu ko "IRFU1" nga wahanga
Ko nga waahanga e whai ake nei ko 'IRFU1'
Wāhanga # | Kaihanga | Kāwai | Te waatea |
---|---|---|---|
IRFU1010Z | International Rectifier (Infineon Technologies) | Transistors - FETs, MOSFETs - Single | 563 |
IRFU1010ZPBF | International Rectifier (Infineon Technologies) | Transistors - FETs, MOSFETs - Single | 670 |
IRFU1018E | IR | Specialized Hot ICs | 2566 |
IRFU1018EPBF | International Rectifier (Infineon Technologies) | Transistors - FETs, MOSFETs - Single | 10315 |
IRFU1018EPBF | Infineon Technologies | Single MOSFETs Transistors | |
IRFU110 | Electro-Films (EFI) / Vishay | Transistors - FETs, MOSFETs - Single | 2797 |
IRFU110 | Vishay / Siliconix | Transistors - FETs, MOSFETs - Single | 2339 |
IRFU110 IRLU110 | IR | Specialized Hot ICs | 1 |
IRFU110A | IR | Specialized Hot ICs | 49 |
IRFU110PBF | Vishay / Siliconix | Transistors - FETs, MOSFETs - Single | 39953 |
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IRFU120NPBF nga kaihanga waitohu: Infineon Technologies, Bonchip taonga, IRFU120NPBF utu tohutoro. IRFU120NPBF tawhā, IRFU120NPBF Pepa Raraunga PDF me te whakaahuatanga whakaahua pine.Ka taea e koe te whakamahi i te IRFU120NPBF Hononga Mono, DSP Dateseet PDF, kimihia IRFU120NPBF te hoahoa titi me te hoahoa ara iahiko me te tikanga whakamahi mahi, IRFU120NPBF akoranga hikohiko.Ka taea e koe te tango mai i te Bonchip.
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