IRFU4620PBF Whakatakotoranga Hangarau

IRFU4620PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Contact Plating Tin
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2009
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) 260
Number of Elements 1
Element Configuration Single
Power Dissipation 144W
Turn On Delay Time 13.4 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 100μA
Current - Continuous Drain (Id) @ 25°C 24A Tc
Rise Time 22.4ns
Vgs (Max) ±20V
Turn-Off Delay Time 25.4 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Nominal Vgs 5 V
Length 6.73mm
Radiation Hardening No
RoHS Status RoHS Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Obsolete
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) 30
Power Dissipation-Max 144W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 78m Ω @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1710pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 14.8 ns
Continuous Drain Current (ID) 24A
Drain-source On Resistance-Max 0.078Ohm
Dual Supply Voltage 200V
Height 2.39mm
Width 6.22mm
REACH SVHC No SVHC
Lead Free Lead Free
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