IRG4BC10KDPBF Whakatakotoranga Hangarau

IRG4BC10KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Bonchip

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2000
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 600V
Current Rating 9A
Element Configuration Single
Case Connection COLLECTOR
Turn On Delay Time 46 ns
Rise Time 32ns
Turn-Off Delay Time 100 ns
Max Collector Current 9A
Collector Emitter Breakdown Voltage 600V
Turn On Time 78 ns
Vce(on) (Max) @ Vge, Ic 2.62V @ 15V, 5A
Gate Charge 19nC
Td (on/off) @ 25°C 49ns/97ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 210ns
Length 10.5156mm
Radiation Hardening No
RoHS Status RoHS Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Part Status Obsolete
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 38W
Number of Elements 1
Power Dissipation 38W
Input Type Standard
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.62V
JEDEC-95 Code TO-220AB
Collector Emitter Saturation Voltage 2.39V
Test Condition 480V, 5A, 100 Ω, 15V
Turn Off Time-Nom (toff) 410 ns
Current - Collector Pulsed (Icm) 18A
Switching Energy 250μJ (on), 140μJ (off)
Gate-Emitter Thr Voltage-Max 6.5V
Height 8.77mm
Width 4.69mm
REACH SVHC No SVHC
Lead Free Contains Lead, Lead Free
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