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IRGS4B60KD1PBF Whakatakotoranga Hangarau

IRGS4B60KD1PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Bonchip

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2003
Part Status Obsolete
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Voltage - Rated DC 600V
Terminal Form GULL WING
Current Rating 11A
Base Part Number IRGS4B60KD1PBF
Number of Elements 1
Power Dissipation 63W
Input Type Standard
Rise Time 23ns
Collector Emitter Voltage (VCEO) 2.5V
Reverse Recovery Time 93 ns
Collector Emitter Saturation Voltage 2.5V
Test Condition 400V, 4A, 100 Ω, 15V
Turn Off Time-Nom (toff) 199 ns
Gate Charge 12nC
Td (on/off) @ 25°C 22ns/100ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 89ns
Length 10.668mm
Radiation Hardening No
RoHS Status RoHS Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 63W
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Element Configuration Single
Case Connection COLLECTOR
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Max Collector Current 11A
Collector Emitter Breakdown Voltage 600V
Turn On Time 40 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 4A
IGBT Type NPT
Current - Collector Pulsed (Icm) 22A
Switching Energy 73μJ (on), 47μJ (off)
Gate-Emitter Thr Voltage-Max 5.5V
Height 4.699mm
Width 9.652mm
REACH SVHC No SVHC
Lead Free Lead Free
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