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IRL3705NSPBF Whakatakotoranga Hangarau

MOSFET N-CH 55V 89A D2PAK

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~175°C TJ
Published 2004
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 3.8W Ta 170W Tc
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 89A Tc
Drain to Source Voltage (Vdss) 55V
Vgs (Max) ±16V
Drain-source On Resistance-Max 0.012Ohm
DS Breakdown Voltage-Min 55V
RoHS Status ROHS3 Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Discontinued
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 10m Ω @ 46A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 98nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Drain Current-Max (Abs) (ID) 89A
Pulsed Drain Current-Max (IDM) 310A
Avalanche Energy Rating (Eas) 340 mJ
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