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IRL540NSTRRPBF Whakatakotoranga Hangarau

MOSFET N-CH 100V 36A D2PAK

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Discontinued
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Min Operating Temperature -55°C
Voltage - Rated DC 100V
Terminal Form GULL WING
Current Rating 36A
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 3.8W Ta 140W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 44m Ω @ 18A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 74nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Fall Time (Typ) 62 ns
Continuous Drain Current (ID) 36A
Drain to Source Breakdown Voltage 100V
Length 10.668mm
Radiation Hardening No
Lead Free Lead Free
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Published 2004
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 175°C
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 3.8W
Turn On Delay Time 11 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 36A Tc
Rise Time 81ns
Vgs (Max) ±16V
Turn-Off Delay Time 39 ns
Gate to Source Voltage (Vgs) 16V
Height 4.826mm
Width 9.65mm
RoHS Status ROHS3 Compliant
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