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IRLB3036PBF Whakatakotoranga Hangarau

IRLB3036PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2008
Part Status Active
Number of Terminations 3
Resistance 2.4MOhm
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Power Dissipation 380W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.4m Ω @ 165A, 10V
Input Capacitance (Ciss) (Max) @ Vds 11210pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 140nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Turn-Off Delay Time 110 ns
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 60V
Height 9.02mm
Width 4.699mm
RoHS Status ROHS3 Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Power Dissipation-Max 380W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 66 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 195A Tc
Rise Time 220ns
Vgs (Max) ±16V
Continuous Drain Current (ID) 195A
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 270A
Avalanche Energy Rating (Eas) 290 mJ
Length 10.5156mm
REACH SVHC No SVHC
Lead Free Lead Free
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IRLB3036PBF Tuhinga

Tikiakehia nga papaarangi me nga tuhinga kaihanga mo IRLB3036PBF

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Ko nga waahanga e whai ake nei ko  'IRLB3' 

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