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IRLR2705TRLPBF Whakatakotoranga Hangarau

MOSFET N-CH 55V 28A DPAK

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 68W Tc
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 28A Tc
Drain to Source Voltage (Vdss) 55V
Vgs (Max) ±16V
Drain Current-Max (Abs) (ID) 28A
Pulsed Drain Current-Max (IDM) 110A
Avalanche Energy Rating (Eas) 110 mJ
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~175°C TJ
Published 2005
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 40m Ω @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds 880pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
JEDEC-95 Code TO-252AA
Drain-source On Resistance-Max 0.051Ohm
DS Breakdown Voltage-Min 55V
RoHS Status ROHS3 Compliant
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