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SPW12N50C3FKSA1 Whakatakotoranga Hangarau

Trans MOSFET N-CH 560V 11.6A 3-Pin(3+Tab) TO-247

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-247-3
Operating Temperature -55°C~150°C TJ
Published 2005
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 125W Tc
Power Dissipation 125W
FET Type N-Channel
Vgs(th) (Max) @ Id 3.9V @ 500μA
Current - Continuous Drain (Id) @ 25°C 11.6A Tc
Rise Time 8ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 8 ns
Continuous Drain Current (ID) 11.6A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.38Ohm
Avalanche Energy Rating (Eas) 340 mJ
RoHS Status RoHS Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Transistor Element Material SILICON
Packaging Tube
Series CoolMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH VOLTAGE
Terminal Position SINGLE
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 10 ns
Rds On (Max) @ Id, Vgs 380m Ω @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V
Drain to Source Voltage (Vdss) 560V
Vgs (Max) ±20V
Turn-Off Delay Time 45 ns
JEDEC-95 Code TO-247AD
Max Dual Supply Voltage 500V
Pulsed Drain Current-Max (IDM) 34.8A
Radiation Hardening No
Lead Free Lead Free
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