IPA90R1K2C3XKSA1 Whakatakotoranga Hangarau

MOSFET N-CH 900V 5.1A 10-220FP

Huanga Hua Uara Huanga
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer International Rectifier (Infineon Technologies)
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 3.5V @ 310µA
Technology MOSFET (Metal Oxide)
Series CoolMOS™
Power Dissipation (Max) 31W (Tc)
Package / Case TO-220-3 Full Pack
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 100V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V
Detailed Description N-Channel 900V 5.1A (Tc) 31W (Tc) Through Hole PG-TO220-FP
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package PG-TO220-FP
Rds On (Max) @ Id, Vgs 1.2 Ohm @ 2.8A, 10V
Packaging Tube
Other Names IPA90R1K2C3 IPA90R1K2C3-ND Q4141204 SP000413714
Mounting Type Through Hole
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) @ 25°C 5.1A (Tc)
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