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2N5401G Whakatakotoranga Hangarau

2N5401G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Mounting Type Through Hole
Surface Mount NO
Weight 4.535924g
Operating Temperature -55°C~150°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 625mW
Peak Reflow Temperature (Cel) 260
Frequency 300MHz
Base Part Number 2N5401
Number of Elements 1
Power Dissipation 625mW
Gain Bandwidth Product 300MHz
Transistor Type PNP
Max Collector Current 600mA
Current - Collector Cutoff (Max) 50nA ICBO
Collector Emitter Breakdown Voltage 150V
Collector Emitter Saturation Voltage 500mV
Emitter Base Voltage (VEBO) 5V
Height 5.334mm
Width 4.191mm
REACH SVHC No SVHC
Lead Free Lead Free
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Copper, Silver, Tin
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Transistor Element Material SILICON
Packaging Bulk
JESD-609 Code e1
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Voltage - Rated DC -150V
Terminal Position BOTTOM
Current Rating -600mA
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Element Configuration Single
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 150V
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Transition Frequency 100MHz
Collector Base Voltage (VCBO) 160V
hFE Min 50
Length 5.1816mm
Radiation Hardening No
RoHS Status RoHS Compliant
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Ko nga waahanga e whai ake nei ko  '2N540' 

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