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2N5830 Whakatakotoranga Hangarau

2N5830 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92-3
Operating Temperature -55°C~150°C TJ
Published 1997
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Min Operating Temperature -55°C
Max Power Dissipation 625mW
Base Part Number 2N5830
Polarity NPN
Power Dissipation 625mW
Transistor Type NPN
Max Collector Current 200mA
Current - Collector Cutoff (Max) 50nA ICBO
Collector Emitter Breakdown Voltage 100V
Current - Collector (Ic) (Max) 200mA
Collector Base Voltage (VCBO) 120V
hFE Min 80
Lead Free Lead Free
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Number of Pins 3
Weight 201mg
Packaging Bulk
Part Status Obsolete
Max Operating Temperature 150°C
Voltage - Rated DC 100V
Current Rating 200mA
Number of Elements 1
Element Configuration Single
Power - Max 625mW
Collector Emitter Voltage (VCEO) 100V
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 100V
Collector Emitter Saturation Voltage 250mV
Emitter Base Voltage (VEBO) 5V
RoHS Status RoHS Compliant
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2N5830 Tuhinga

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  • Rauraraunga

Ko etahi atu ko   "2N583"   nga wahanga

Ko nga waahanga e whai ake nei ko  '2N583' 

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