2SB1215T-E Whakatakotoranga Hangarau

2SB1215T-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Contact Plating Tin
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Operating Temperature 150°C TJ
Published 2012
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Other Transistors
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Configuration Single
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 100V
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA 5V
Vce Saturation (Max) @ Ib, Ic 500mV @ 150mA, 1.5A
Frequency - Transition 130MHz
Emitter Base Voltage (VEBO) -6V
RoHS Status ROHS3 Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Bulk
JESD-609 Code e6
Part Status Active
ECCN Code EAR99
Max Power Dissipation 1W
Reach Compliance Code not_compliant
Base Part Number 2SB1215
Power - Max 1W
Transistor Type PNP
Max Collector Current 3A
Current - Collector Cutoff (Max) 1μA ICBO
Collector Emitter Breakdown Voltage 100V
Collector Base Voltage (VCBO) 120V
hFE Min 70
Lead Free Lead Free
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