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BC639 Whakatakotoranga Hangarau

BC639 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mount Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Weight 201mg
Manufacturer Package Identifier TO−92 CASE 29 STYLE 14
Packaging Bulk
JESD-609 Code e0
Part Status Obsolete
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 625mW
Peak Reflow Temperature (Cel) 240
Current Rating 1A
[email protected] Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Power Dissipation 1W
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 80V
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 2V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Transition Frequency 200MHz
Max Breakdown Voltage 80V
Emitter Base Voltage (VEBO) 5V
REACH SVHC No SVHC
Lead Free Lead Free
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Copper, Silver, Tin
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Published 2002
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Terminal Finish Tin/Lead (Sn/Pb)
Voltage - Rated DC 80V
Terminal Position BOTTOM
Reach Compliance Code not_compliant
Frequency 100MHz
Base Part Number BC639
Qualification Status Not Qualified
Element Configuration Single
Gain Bandwidth Product 200MHz
Transistor Type NPN
Max Collector Current 1A
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 80V
Collector Emitter Saturation Voltage 500mV
Collector Base Voltage (VCBO) 80V
hFE Min 40
RoHS Status Non-RoHS Compliant
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BC639 Tuhinga

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Ko etahi atu ko   "BC639"   nga wahanga

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