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BD13516STU Whakatakotoranga Hangarau

BD13516STU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 22 Weeks
Mount Through Hole
Package / Case TO-225AA, TO-126-3
Weight 761mg
Operating Temperature 150°C TJ
Published 2013
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 1.25W
Base Part Number BD135
Element Configuration Single
Transistor Application SWITCHING
Transistor Type NPN
Max Collector Current 1.5A
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage 500mV
Emitter Base Voltage (VEBO) 5V
Height 11.2mm
Width 3.45mm
RoHS Status ROHS3 Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Voltage - Rated DC 45V
Current Rating 1.5A
Number of Elements 1
Power Dissipation 1.25W
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 45V
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 2V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Transition Frequency 250MHz
Collector Base Voltage (VCBO) 45V
hFE Min 40
Length 8.3mm
Radiation Hardening No
Lead Free Lead Free
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BD13516STU Tuhinga

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  • Rauraraunga

Ko etahi atu ko   "BD135"   nga wahanga

Ko nga waahanga e whai ake nei ko  'BD135' 

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