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FCD7N60TM-WS Whakatakotoranga Hangarau

MOSFET N-CH 600V 7A DPAK

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 260.37mg
Operating Temperature -55°C~150°C TJ
Series SuperFET™
Part Status Active
Number of Terminations 2
Subcategory FET General Purpose Power
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 83W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 600m Ω @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 920pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 32 ns
Continuous Drain Current (ID) 7A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
RoHS Status ROHS3 Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 600MOhm
Technology MOSFET (Metal Oxide)
Base Part Number FCD7N60
Number of Elements 1
Element Configuration Single
Power Dissipation 83W
Turn On Delay Time 35 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 7A Tc
Rise Time 55ns
Vgs (Max) ±30V
Turn-Off Delay Time 75 ns
JEDEC-95 Code TO-252AA
Drain Current-Max (Abs) (ID) 7A
Radiation Hardening No
Lead Free Lead Free
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