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FCPF400N80ZL1 Whakatakotoranga Hangarau

MOSFET HV SuperJunction MOS

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mount Through Hole
Package / Case TO-220-3 Full Pack
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Resistance 400mOhm
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 35.7W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 20 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4.5V @ 1.1mA
Current - Continuous Drain (Id) @ 25°C 11A Tc
Rise Time 12ns
Vgs (Max) ±20V
Turn-Off Delay Time 51 ns
JEDEC-95 Code TO-220AB
Drain to Source Breakdown Voltage 800V
Avalanche Energy Rating (Eas) 339 mJ
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Through Hole
Weight 2.27g
Operating Temperature -55°C~150°C TJ
Series SuperFET® II
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Reach Compliance Code not_compliant
JESD-30 Code R-PSFM-T3
Number of Channels 1
Element Configuration Single
Case Connection ISOLATED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 400m Ω @ 5.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2350pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 2.6 ns
Continuous Drain Current (ID) 11A
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 33A
RoHS Status ROHS3 Compliant
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