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FDD13AN06A0-F085 Whakatakotoranga Hangarau

MOSFET N-CH 60V 50A DPAK

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Subcategory FET General Purpose Power
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 115W Tc
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 9.9A Ta 50A Tc
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 9.9A
DS Breakdown Voltage-Min 60V
RoHS Status ROHS3 Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~175°C TJ
Series Automotive, AEC-Q101, PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
Base Part Number FDD13AN06
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 13.5m Ω @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
JEDEC-95 Code TO-252AA
Drain-source On Resistance-Max 0.0135Ohm
Avalanche Energy Rating (Eas) 56 mJ
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Ko etahi atu ko   "FDD13"   nga wahanga

Ko nga waahanga e whai ake nei ko  'FDD13' 

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