FDD5612 Whakatakotoranga Hangarau

FDD5612 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 260.37mg
Operating Temperature -55°C~175°C TJ
Published 2016
JESD-609 Code e3
Part Status Active
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 60V
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 3.8W Ta 42W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 55m Ω @ 5.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds 660pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Fall Time (Typ) 4 ns
Continuous Drain Current (ID) 18A
Gate to Source Voltage (Vgs) 20V
Dual Supply Voltage 60V
Nominal Vgs 2.4 V
Length 6.73mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 9 hours ago)
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 64MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 18A
Number of Elements 1
Element Configuration Single
Power Dissipation 42W
Turn On Delay Time 8 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 5.4A Ta
Rise Time 4ns
Vgs (Max) ±20V
Turn-Off Delay Time 24 ns
Threshold Voltage 2.4V
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 90 mJ
Height 2.39mm
Width 6.22mm
REACH SVHC No SVHC
Lead Free Lead Free
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FDD5612 Tuhinga

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