FDD8770 Whakatakotoranga Hangarau

FDD8770 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Huanga Hua Uara Huanga
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 260.37mg
Operating Temperature -55°C~175°C TJ
Series PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 25V
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 115W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4m Ω @ 35A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3720pF @ 13V
Gate Charge (Qg) (Max) @ Vgs 73nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 25 ns
Continuous Drain Current (ID) 35A
JEDEC-95 Code TO-252AA
Drain to Source Breakdown Voltage 25V
Nominal Vgs 1.6 V
Length 6.35mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Resistance 4MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 35A
Number of Elements 1
Element Configuration Single
Power Dissipation 115W
Turn On Delay Time 10 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 35A Tc
Rise Time 12ns
Vgs (Max) ±20V
Turn-Off Delay Time 49 ns
Threshold Voltage 1.6V
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 407A
Height 6.35mm
Width 6.35mm
REACH SVHC No SVHC
Lead Free Lead Free
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FDD8770 Tuhinga

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