FDMS3664S Whakatakotoranga Hangarau

FDMS3664S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Bonchip

Huanga Hua Uara Huanga
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mount Surface Mount
Package / Case 8-PowerTDFN
Weight 171mg
Operating Temperature -55°C~150°C TJ
Series PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Form FLAT
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN SOURCE
FET Type 2 N-Channel (Dual) Asymmetrical
Rds On (Max) @ Id, Vgs 8m Ω @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1765pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Continuous Drain Current (ID) 25A
Drain Current-Max (Abs) (ID) 13A
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 70 pF
Length 5mm
Radiation Hardening No
Huanga Hua Uara Huanga
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Surface Mount
Number of Pins 8
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 6
Terminal Finish Tin (Sn)
Max Power Dissipation 1W
JESD-30 Code R-PDSO-F6
Element Configuration Dual
Power Dissipation 2.5W
Turn On Delay Time 7.7 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.7V @ 250μA
Current - Continuous Drain (Id) @ 25°C 13A 25A
Turn-Off Delay Time 19 ns
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 30V
FET Feature Logic Level Gate
Height 1.1mm
Width 5.9mm
RoHS Status ROHS3 Compliant
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